B.TECH. IN ELECTRONICS ENGINEERING (VLSI DESIGN AND TECHNOLOGY)electivetheorySem 3
VLSI FABRICATION TECHNOLOGY
ECE 3129
Syllabus
- 01VLSI Environment: Cleanroom, Safety, Thin Film, Vacuum Fundamentals
- 02Material Properties and Crystal Growth: Semiconductor Properties, Crystal Structure, Miller Indices, Defects, Silicon Growth, Dopant Distribution, Material Characterization
- 03Silicon Oxidation: Thermal Oxidation, Deal-Grove Model, Dry/Wet Oxidation, Impurity Redistribution, Masking, Oxide Quality, Thickness Characterization
- 04Photolithography: Optical Lithography, Exposure Tools, Masks, Photoresists, Pattern Transfer, Lift-Off, Resolution Enhancement
- 05Etching: Wet and Dry Etching, Etch Mechanisms, Plasma Diagnostics, End-Point Control
- 06Diffusion: Fick’s Law, Pre-Deposition, Drive-In Diffusion, Diffusion Profiles
- 07Ion Implantation: Ion Range, Distribution, Stopping, Channeling, Implant Damage, Annealing
- 08Film Deposition: Epitaxial Growth, CVD, Molecular Beam Epitaxy, Polysilicon, Metallization (Al, Cu)
- 09Fabrication Processes: IC Resistors, Capacitors, Inductors, BJTs, MOSFETs, Packaging Fundamentals
References
- May G. S. and Sze S. M, Fundamentals of Semiconductor Fabrication, Wiley India Pvt. Ltd. 2011
- Gandhi S. K., VLSI Fabrication Principles, John Wiley and Sons, 2009
- Ruska W. S, Microelectronic Processing, McGraw Hill, 1997
- Zant P. V., Microchip Fabrication, McGraw Hill, 2013
- Campbell S., The Science and Engineering of Microelectronic Fabrication, Oxford Press, Cambridge, 2013
Credits Structure
3Lecture
0Tutorial
0Practical
3Total